EBeam Lithography for Compound Semiconductor Nanoelectronics 1

Industry Client

Using electron beam lithography for the fabrication of prototype nano-scale electronic devices, to study material properties and semiconductor physics at the nanometer scale.

This SEM micrograph shows example lithographic lines in a negative-tone electron-beam resist drawn at 50, 40, and 30 nm widths (left to right), on a wafer of compound semiconductor material. By utilizing individual dose control of each design size, the resist line width after development is at the design size, within measurement error. In this case, subsequent processing and testing was performed at the client's site.